Title :
Highest cryogenic transconductance of 2.2 S/mm for 400-nm-gate InGaAs/InAlAs PHEMT fabricated on [411]A-oriented InP substrate
Author :
Watanabe, I. ; Shinohara, K. ; Kitada, T. ; Shimomura, S. ; Endoh, A. ; Mimura, T. ; Matsui, T. ; Hiyamizu, S.
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol., Tokyo, Japan
Abstract :
We fabricated an In0.75Ga0.25As/In0.52Al0.48As pseudomorphic high electron mobility transistor (PHEMT) with a gate length (Lg) of 400 nm on a [411]A-oriented InP substrate by molecular beam epitaxy (MBE) and obtained a maximum transconductance (gm) of 1.6 S/mm at 300 K, which is almost the same as those of ever reported for HEMTs with similar Lg. Furthermore, the gm reached 2.2 S/mm at 16 K, which is the highest value ever reported for HEMTs. This PHEMT also showed a much enhanced cutoff frequency (fT) of 165 GHz at 16 K, compared with its room temperature value (125 GHz).
Keywords :
III-V semiconductors; aluminium compounds; cryogenic electronics; electric admittance; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; 1.6 S/mm; 125 GHz; 16 K; 165 GHz; 2.2 S/mm; 293 to 298 K; 300 K; 400 nm; HEMTs; InGaAs-InAlAs; InGaAs/InAlAs PHEMT; InP; [411]A-oriented InP substrate; cryogenic transconductance; enhanced cutoff frequency; gate length; molecular beam epitaxy; pseudomorphic high electron mobility transistor; room temperature value; Cryogenics; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Molecular beam epitaxial growth; PHEMTs; Substrates; Transconductance;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517455
