DocumentCode :
2172728
Title :
Micro-photoreflectance spectroscopy investigation of InGaAlAs/GaAsSb/InP heterojunction bipolar transistors
Author :
Chouaib, H. ; Bakouboula, A. ; Benyattou, T. ; Bru-Chevallier, C. ; Lahreche, H. ; Bove, P.
Author_Institution :
Lab. de Phys. de la Matiere, UMR, Villeurbanne, France
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
200
Lastpage :
203
Abstract :
We characterize InGaAlAs/GaAsSb/InP heterojunction bipolar transistor structures using microphotoreflectance spectroscopy (micro-PR). The experiments show the feasibility of micro-PR measurement on a 1μm diameter spot opening the way to device optical characterization under operation.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; photoreflectance; InGaAlAs-GaAsSb-InP; device optical characterization; heterojunction bipolar transistors; microphotoreflectance spectroscopy; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Laser beams; Laser excitation; Optical attenuators; Optical devices; Probes; Spectroscopy; Surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517456
Filename :
1517456
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2172728
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