DocumentCode :
2172762
Title :
Vertical scaling of gate-to-channel distance for a 70 nm InP pseudomorphic HEMT technology
Author :
Borg, Malin ; Grahn, Jan ; Wang, Shumin ; Mellberg, Anders ; Zirath, Herbert
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
204
Lastpage :
207
Abstract :
DC and HF performance for a 70 nm InP PHEMT technology have been studied as a function of gate-to-channel distance. The optimized PHEMT exhibited a maximum transconductance of 1.5 S/mm and fmax of 400 GHz.
Keywords :
III-V semiconductors; electric admittance; high electron mobility transistors; indium compounds; 1.5 S/mm; 400 GHz; 70 nm InP pseudomorphic HEMT technology; DC performance; HF performance; InP; gate-to-channel distance; transconductance; vertical scaling; Gold; HEMTs; Indium gallium arsenide; Indium phosphide; Microwave technology; Molecular beam epitaxial growth; PHEMTs; Schottky barriers; Thickness control; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517457
Filename :
1517457
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2172762
بازگشت