Nanoscale FinFET global parameter extraction for the BSIM-CMG model

The implementation of the BSIM-CMG parameter extraction procedure is presented and discussed, based on measurements. FinFETs with mask channel length from 45nm to 10µm were measured and their DC I–V data used for the extraction. We show an improved fitting of a wide range of channel lengths using a single set of model parameters. Measured devices with fin thickness of 10nm, 15nm and 20nm are studied and the variation of extracted parameters discussed. We propose improvements on the BSIM-CMG extraction procedure to obtain a fitting over a wide range of Leff. The results present mean absolute percentage errors around 50% and 30%, which shows that a single set of model parameters is inadequate for a wide range of FinFET geometries.