Title :
InP substrate evaluation for epi-ready MBE growth
Author :
Liu, W.K. ; Fastenau, J.M. ; Lubyshev, D. ; Fang, X.-M. ; Doss, C. ; Wu, Y.
Author_Institution :
IQE Inc., Bethlehem, PA, USA
Abstract :
This paper compares 3" and 4" SI InP substrates from multiple vendors in terms of their epi-ready quality for MBE growth, with a focus on surface morphology and on epilayer-substrate interface charge and buffer leakage.
Keywords :
III-V semiconductors; buffer layers; epitaxial layers; indium compounds; molecular beam epitaxial growth; substrates; surface cleaning; surface morphology; 3 in; 4 in; InP; InP substrate; buffer leakage; epi-ready MBE growth; epilayer-substrate interface charge; surface cleaning; surface morphology; HEMTs; Heterojunction bipolar transistors; Indium phosphide; MODFETs; Manufacturing; Molecular beam epitaxial growth; Optical buffering; Optical devices; Substrates; Surface morphology;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517459
