DocumentCode :
2173045
Title :
An ICP-RIE etching process for InP-based photonic crystals using Cl2/Ar/N2 chemistry
Author :
Strasser, P. ; Wüest, R. ; Robin, F. ; Rauscher, K. ; Wild, B. ; Erni, D. ; Jäckel, H.
Author_Institution :
Commun. Photonics Group, Eidgenossische Tech. Hochschule, Zurich, Switzerland
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
242
Lastpage :
245
Abstract :
We demonstrate the use of a Cl2/Ar/N2-mixture to etch InP/InGaAsP-photonic crystals. The influence of process parameters on hole depth and hole shape is discussed and the process is characterized using the internal-light-source technique.
Keywords :
III-V semiconductors; indium compounds; photonic crystals; sputter etching; Cl2/Ar/N2 chemistry; InP; InP-based photonic crystals; hole depth; hole shape; inductively coupled plasma reactive ion etching; internal-light-source technique; Argon; Chemistry; Etching; Helium; Indium phosphide; Microwave communication; Photonic crystals; Plasma applications; Plasma sources; Plasma temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517468
Filename :
1517468
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2173045
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