Title :
n-channel, p-channel, depletion, enhancement GaAs metal-insulator-semiconductor field effect transistors with gate films formed by oxi-nitridation of GaAs surfaces
Author :
Paul, N.C. ; Takebe, M. ; Tametou, M. ; Seto, H. ; Fujino, Y. ; Iiyama, K. ; Takamiya, S.
Author_Institution :
Graduate Sch. of Natural Sci. & Technol., Kanazawa Univ., Japan
Abstract :
UV and ozone oxidation on GaAs form the oxide layer. Nitridation on oxidized GaAs creates the around 10 nm thin GaON insulating film which shows the comparatively good performance than only oxidized GaAs sample. Nitridation remove out the undesirable As-oxide from the oxi-nitride layer. Applying this insulator in the gate area, we fabricated n-channel, p-channel, depletion and enhancement mode GaAs MISFET. Transconductance obtained are 250 (n-channel depletion), 60 (n-channel enhancement), 25 (p-channel enhancement) mS/mm, respectively which are larger than the previously reported data.
Keywords :
III-V semiconductors; MISFET; electric admittance; gallium arsenide; insulating thin films; nitridation; oxidation; wide band gap semiconductors; 25 mS/mm; 250 mS/mm; 60 mS/mm; GaAs; GaAs metal-insulator-semiconductor field effect transistors; GaAs surfaces; GaON; UV oxidation; gate films; n-channel depletion MISFET; n-channel enhancement MISFET; nitridation; oxide layers; oxinitridation; ozone oxidation; p-channel depletion MISFET; p-channel enhancement MISFET; thin GaON insulating films; transconductance; Doping; FETs; Gallium arsenide; Insulation; Leakage current; MISFETs; Metal-insulator structures; Oxidation; Semiconductor films; Transconductance;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517469
