n-channel, p-channel, depletion, enhancement GaAs metal-insulator-semiconductor field effect transistors with gate films formed by oxi-nitridation of GaAs surfaces

Author

Paul, N.C. ; Takebe, M. ; Tametou, M. ; Seto, H. ; Fujino, Y. ; Iiyama, K. ; Takamiya, S.

Author_Institution

Graduate Sch. of Natural Sci. & Technol., Kanazawa Univ., Japan

fYear

2005

fDate

8-12 May 2005

Firstpage

246

Lastpage

249

Abstract

UV and ozone oxidation on GaAs form the oxide layer. Nitridation on oxidized GaAs creates the around 10 nm thin GaON insulating film which shows the comparatively good performance than only oxidized GaAs sample. Nitridation remove out the undesirable As-oxide from the oxi-nitride layer. Applying this insulator in the gate area, we fabricated n-channel, p-channel, depletion and enhancement mode GaAs MISFET. Transconductance obtained are 250 (n-channel depletion), 60 (n-channel enhancement), 25 (p-channel enhancement) mS/mm, respectively which are larger than the previously reported data.

Keywords

III-V semiconductors; MISFET; electric admittance; gallium arsenide; insulating thin films; nitridation; oxidation; wide band gap semiconductors; 25 mS/mm; 250 mS/mm; 60 mS/mm; GaAs; GaAs metal-insulator-semiconductor field effect transistors; GaAs surfaces; GaON; UV oxidation; gate films; n-channel depletion MISFET; n-channel enhancement MISFET; nitridation; oxide layers; oxinitridation; ozone oxidation; p-channel depletion MISFET; p-channel enhancement MISFET; thin GaON insulating films; transconductance; Doping; FETs; Gallium arsenide; Insulation; Leakage current; MISFETs; Metal-insulator structures; Oxidation; Semiconductor films; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2005. International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8891-7

Type

conf

DOI

10.1109/ICIPRM.2005.1517469

Filename

1517469