DocumentCode :
2173235
Title :
Fabrication of nanowires on InP(100) by Ar+ irradiation
Author :
Zhao, G. ; Hill, G. ; Daud, S.M. ; Snowdon, K.J.
Author_Institution :
INEX, Newcastle upon Tyne Univ., UK
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
269
Lastpage :
272
Abstract :
Arrays of nanowires of 32 nm high, with a periodicity of 134 nm were produced over an area of several square micrometers with 2 keV Ar+ ion bombardment at 72° incidence angle to surface normal to a dose of 2×1017 cm-2. The formation of ripples and nanowires is believed to arise from mergence of tailed cones agglomerated from In ions due to the preferential sputtering of P from InP.
Keywords :
III-V semiconductors; indium compounds; ion beam effects; nanotechnology; nanowires; sputtering; 32 nm; Ar+ irradiation; In ions; InP; InP(100); ion bombardment; nanowires fabrication; preferential sputtering; ripples; tailed cones; Argon; Fabrication; Indium phosphide; Ion beams; Nanowires; Rough surfaces; Surface morphology; Surface roughness; Surface topography; Surface waves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517476
Filename :
1517476
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2173235
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