• DocumentCode
    2173297
  • Title

    Room temperature CW operation of InAs/InP (100) quantum dots based buried ridge stripe lasers

  • Author

    Lelarge, F. ; Rousseau, B. ; Poingt, F. ; Pommereau, F. ; Accard, A.

  • Author_Institution
    Alcatel-Thales III-V Lab, Marcoussis, France
  • fYear
    2005
  • fDate
    8-12 May 2005
  • Firstpage
    276
  • Lastpage
    278
  • Abstract
    Fabrication of InAs QDs grown on (100) InP substrate by GSMBE is reported. We investigate the room temperature operation of QDs-based broad area and buried ridge stripe lasers emitting at 1.5 μm (JTh, T0, αH).
  • Keywords
    III-V semiconductors; chemical beam epitaxial growth; indium compounds; quantum dot lasers; semiconductor quantum dots; 1.5 micron; 293 to 298 K; GSMBE; InAs quantum dots; InAs-InP; InP; InP(100) substrate; buried ridge stripe lasers; room temperature CW operation; Epitaxial growth; Gas lasers; Indium phosphide; Laser theory; Optical device fabrication; Quantum dot lasers; Quantum well lasers; Substrates; Temperature; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2005. International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8891-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2005.1517478
  • Filename
    1517478
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2173297