• DocumentCode
    2173537
  • Title

    Cl2/O2- and Cl2/N2-based inductively coupled plasma etching of photonic crystals in InP: sidewall passivation

  • Author

    van der Heijden, R. ; Carlstrom, C.F. ; van der Drift, E. ; van der Heijden, R.W. ; Notzel, R. ; van Veldhoven, R. ; Karouta, F. ; Salemink, H.W.M. ; Talneau, A.

  • Author_Institution
    COBRA Inter-Univ. Res. Inst., Eindhoven Univ. of Technol., Netherlands
  • fYear
    2005
  • fDate
    8-12 May 2005
  • Firstpage
    315
  • Lastpage
    318
  • Abstract
    We have fabricated two-dimensional photonic crystals in InP-based materials with Cl2-based inductively coupled plasma etching. To obtain vertical sidewalls, we employ sidewall passivation through addition of N2 or O2 to the plasma. With the Cl2O2-process we are able to etch 3.2 μm deep holes that have nearly cylindrical shape in the upper 2 μm. The first optical results illustrate the feasibility of our approach, showing over 30 dB transmission reduction in the ΓK-stopband.
  • Keywords
    III-V semiconductors; indium compounds; passivation; photonic crystals; sputter etching; ΓK-stopband; 3.2 micron; Cl2/N2-based inductively coupled plasma etching; Cl2/O2-based inductively coupled plasma etching; InP; InP-based materials; inductively coupled plasma etching; sidewall passivation; transmission reduction; two-dimensional photonic crystal fabrication; vertical sidewalls; Crystalline materials; Etching; Indium phosphide; Passivation; Photonic crystals; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma measurements; Plasma temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2005. International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8891-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2005.1517489
  • Filename
    1517489
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2173537