Title :
Transport and magnetic properties of Co1-xNixSb3 with x less than 0.01
Author :
Dyck, J.S. ; Chen, W. ; Yang, J. ; Meisner, G.P. ; Uher, C.
Author_Institution :
Dept. of Phys., Michigan Univ., Ann Arbor, MI, USA
Abstract :
The filled skutterudite compounds based on the binary skutterudite CoSb3 are currently being investigated for their potential application as thermoelectric materials. One route to optimization of these compounds is by doping on the Co site. An obvious candidate for an n-type dopant is Ni, because it has one more electron in its valence shell than Co. We present electrical resistivity, thermopower, Hall effect and magnetic susceptibility measurements on polycrystalline, n-type Co1-xNixSb3 with x less than 0.01. A model which takes into account conduction of electrons residing in the conduction band in addition to hopping conduction within an impurity "band" formed by the Ni atoms is consistent with the observed behavior. The doping dependence suggests Ni acts as an electron donor thus taking the tetravalent state Ni4+ and assuming the d6 electronic configuration. The measured magnetic susceptibility suggests a paramagnetic state implying that Ni may carry a moment at least at low temperatures. We attempt to tie together the transport and magnetic susceptibility data to provide a consistent picture of the overall behavior
Keywords :
Hall effect; cobalt compounds; conduction bands; electrical resistivity; hopping conduction; impurity states; magnetic susceptibility; nickel; paramagnetic materials; semiconductor materials; thermal conductivity; thermoelectric power; Co site doping; CoSb3:Ni; Hall effect; binary skutterudite CoSb3; d6 electronic configuration; electrical resistivity; filled skutterudite compounds; hopping conduction; impurity band; magnetic susceptibility; paramagnetic state; polycrystalline n-Co1-xNixSb3; thermal conductivity; thermoelectric materials; thermopower; Doping; Electric resistance; Electric variables measurement; Electrons; Hall effect; Magnetic materials; Magnetic properties; Magnetic susceptibility; Semiconductor process modeling; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-7205-0
DOI :
10.1109/ICT.2001.979823