• DocumentCode
    2173590
  • Title

    A third-order 1 MHz continuous-time sigma-delta modulator in a 130 nm CMOS process

  • Author

    de Aguirre, Paulo Cesar C. ; Klimach, Hamilton D. ; Susin, Altamiro A.

  • Author_Institution
    Computer Architecture and Microelectronics Group, Federal University of Pampa (UNIPAMPA), Alegrete, Brazil
  • fYear
    2015
  • fDate
    24-27 Feb. 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper describes the design and implementation of a low-pass third-order single-loop single-bit continuous-time sigma-delta modulator (CT-SDM) in a 130 nm CMOS process. To reduce clock jitter effects and operational amplifiers requirements a non-return-to-zero (NRZ) digital-to-analog converter (DAC) pulse shape was employed. Post-layout simulation results indicate that the modulator achieves 56 dB of dynamic range, 57.31 dB of peak SNDR or 9.23 bits of effective resolution over a 1 MHz signal bandwidth with an oversampling ratio (OSR) of 64. The CT-SDM draws 5.91 mW from a 1.2 V power supply providing a figure-of-merit (FOM) of 4.93 pJ/conv. The CT-SDM core area is 0.31 mm2 and the chip was manufactured and will be soon characterized.
  • Keywords
    Bandwidth; Clocks; Frequency modulation; Jitter; Resistors; Sigma-delta modulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits & Systems (LASCAS), 2015 IEEE 6th Latin American Symposium on
  • Conference_Location
    Montevideo, Uruguay
  • Type

    conf

  • DOI
    10.1109/LASCAS.2015.7250457
  • Filename
    7250457