Self-aligned InP DHBTs for 150 GHz digital and mixed signal circuits

Author

Le, Minh ; He, Gang ; Hess, Ron ; Partyka, Paul ; Li, Bin ; Bryie, Randy ; Rustomji, Sam ; Kim, Grant ; Lee, Rainier ; Pepper, Jeff ; Helix, Max ; Milano, Ray ; Elder, Richard ; Jansen, Douglas ; Stroili, Frank ; Lai, Jie-Wei ; Feng, Milton

Author_Institution

Vitesse Semicond. Corp., Camarillo, CA, USA

fYear

2005

fDate

8-12 May 2005

Firstpage

325

Lastpage

330

Abstract

A production oriented manufacturing process for Indium Phosphide double-heterojunction bipolar transistor (DHBT) devices that enables 150 GHz digital and mixed signal circuits is presented. These transistors have cut-off frequency (f) and maximum oscillation frequency (f_max) both over 300 GHz and open-base breakdown voltage (BV_ceo) over 4 V. Common Mode Logic (CML) ring oscillators have exhibited 1.95 ps gate delay and Emitter Coupled Logic (ECL) static frequency dividers that operate up to 152 GHz have been demonstrated to benchmark this InP process technology. A 4:1 multiplexer for 100 Gb/s circuits is discussed along with a Gilbert cell Variable Gain Amplifier with excess of 50 GHz bandwidth and record gain bandwidth product of 397 GHz.

Keywords

III-V semiconductors; emitter-coupled logic; frequency dividers; heterojunction bipolar transistors; indium compounds; integrated circuit manufacture; mixed analogue-digital integrated circuits; multiplexing equipment; 100 Gbit/s; 150 GHz; 152 GHz; 397 GHz; Gilbert cell variable gain amplifier; InP; benchmark InP process technology; breakdown voltage; common mode logic; cut-off frequency; digital signal circuits; emitter coupled logic; gain bandwidth; indium phosphide double-heterojunction bipolar transistor devices; manufacturing process; maximum oscillation frequency; mixed signal circuits; multiplexer; ring oscillators; self aligned InP DHBT; static frequency dividers; Bandwidth; Bipolar transistors; Circuits; Cutoff frequency; Double heterojunction bipolar transistors; Frequency conversion; Indium phosphide; Manufacturing processes; Production; Signal processing;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2005. International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8891-7

Type

conf

DOI

10.1109/ICIPRM.2005.1517493

Filename

1517493