DocumentCode :
2173674
Title :
Self-aligned InP DHBTs for 150 GHz digital and mixed signal circuits
Author :
Le, Minh ; He, Gang ; Hess, Ron ; Partyka, Paul ; Li, Bin ; Bryie, Randy ; Rustomji, Sam ; Kim, Grant ; Lee, Rainier ; Pepper, Jeff ; Helix, Max ; Milano, Ray ; Elder, Richard ; Jansen, Douglas ; Stroili, Frank ; Lai, Jie-Wei ; Feng, Milton
Author_Institution :
Vitesse Semicond. Corp., Camarillo, CA, USA
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
325
Lastpage :
330
Abstract :
A production oriented manufacturing process for Indium Phosphide double-heterojunction bipolar transistor (DHBT) devices that enables 150 GHz digital and mixed signal circuits is presented. These transistors have cut-off frequency (f) and maximum oscillation frequency (fmax) both over 300 GHz and open-base breakdown voltage (BVceo) over 4 V. Common Mode Logic (CML) ring oscillators have exhibited 1.95 ps gate delay and Emitter Coupled Logic (ECL) static frequency dividers that operate up to 152 GHz have been demonstrated to benchmark this InP process technology. A 4:1 multiplexer for 100 Gb/s circuits is discussed along with a Gilbert cell Variable Gain Amplifier with excess of 50 GHz bandwidth and record gain bandwidth product of 397 GHz.
Keywords :
III-V semiconductors; emitter-coupled logic; frequency dividers; heterojunction bipolar transistors; indium compounds; integrated circuit manufacture; mixed analogue-digital integrated circuits; multiplexing equipment; 100 Gbit/s; 150 GHz; 152 GHz; 397 GHz; Gilbert cell variable gain amplifier; InP; benchmark InP process technology; breakdown voltage; common mode logic; cut-off frequency; digital signal circuits; emitter coupled logic; gain bandwidth; indium phosphide double-heterojunction bipolar transistor devices; manufacturing process; maximum oscillation frequency; mixed signal circuits; multiplexer; ring oscillators; self aligned InP DHBT; static frequency dividers; Bandwidth; Bipolar transistors; Circuits; Cutoff frequency; Double heterojunction bipolar transistors; Frequency conversion; Indium phosphide; Manufacturing processes; Production; Signal processing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517493
Filename :
1517493
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2173674
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