DocumentCode :
2173718
Title :
Progress in skutterudite-based thermoelectric materials
Author :
Wang, Jiyang ; Liu, Hong ; Hu, Xiaobo ; Jiang, Huaidong ; Zhao, Shanrong ; Li, Qiang ; Boughton, Robert I. ; Jiang, Minhua
Author_Institution :
State Key Lab. of Crystal Mater., Shandong Univ., Jinan, China
fYear :
2001
fDate :
2001
Firstpage :
89
Lastpage :
92
Abstract :
The progress in skutterudite-based thermoelectric materials in our group is reviewed. The effect of the filling fraction on the transport properties of skutterudite material was investigated. It has been found that the partially filled skutterudite with lower filling fraction has better electric transport properties than fully filled skutterudite. Raman scattering investigations on filled skutterudite with different filling fractions has indicated that the rattling degree of the filling atoms in the voids in skutterudite decreases with the increase of the filling fraction. Filled skutterudite NaFe4P12 nanowires of 25-80 nm in diameter and 500-4000 nm in length have been obtained by using novel hydrothermal-reduction-alloying method. The nanowire can be arrayed directionally the magnetic field. A polyaniline/skutterudite thermoelectric composite was synthesized by using an in situ compounding method. An investigation into the electric transport properties of the composite has been carried out
Keywords :
Raman spectra; composite materials; infrared spectra; iron compounds; materials preparation; nanostructured materials; sodium compounds; thermoelectricity; 25 to 80 nm; IR spectra; NaFe4P12; Raman scattering; filling fraction; hydrothermal-reduction; nanowires; partially filled skutterudite; polyaniline; skutterudite-based thermoelectric materials; thermoelectric composite; Composite materials; Conducting materials; Crystalline materials; Filling; Laboratories; Lattices; Nanowires; Tellurium; Thermal conductivity; Thermoelectricity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
Conference_Location :
Beijing
ISSN :
1094-2734
Print_ISBN :
0-7803-7205-0
Type :
conf
DOI :
10.1109/ICT.2001.979829
Filename :
979829
Link To Document :
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