Design of a 4–10 GHz low noise amplifier based on coupled inductors for communication systems

Author

Salehi, Mohammad Reza ; Abiri, A. ; Shahraki, H.

Author_Institution

Dept. of Electr. & Electron. Eng., Shiraz Univ. of Technol., Shiraz, Iran

fYear

2012

fDate

12-14 Oct. 2012

Firstpage

35

Lastpage

40

Abstract

In this paper, an ultra wide-band low-noise amplifier (LNA) based on coupled inductors is designed. A noiseless resistor similar to the inductive degeneration technique is created using coupled inductors. This resistor does not reduce the gain. The LNA is designed in the standard 0.18 μm CMOS technology. Simulation is performed by MATLAB and Agilent technology advanced designed systems (ADS). The LNA achieves an average power gain equal to 31dB and consumes 6.1mW power from a 1.2V supply.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; field effect MMIC; inductors; low noise amplifiers; resistors; ultra wideband communication; ADS; Agilent technology advanced designed systems; LNA; Matlab; communication systems; coupled inductors; frequency 4 GHz to 10 GHz; inductive degeneration technique; low noise amplifier design; power 6.1 mW; resistor; size 0.18 mum; standard CMOS technology; ultrawide-band low-noise amplifier; voltage 1.2 V; Coupled inductors; low noise amplifier; noise figure;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Computers and Applications (MIC-CCA), 2012 Mosharaka International Conference on

Conference_Location

Istanbul

Print_ISBN

978-1-4673-5230-7

Type

conf

Filename

6516780