Measurement and simulation of self-heating in SOI CMOS analogue circuits

Summary form only given. The influence of dynamic self-heating on SOI MOSFET device behaviour is becoming well known. Although digital circuits typically operate sufficiently fast that self-heating does not affect behaviour, its effects must still be considered during parameter extraction. However, that the operation of analogue circuits will be influenced by self-heating is much more likely. Consequently, SPICE models should include self-heating, with accurately characterised thermal resistances and time constants. This paper explores the effect of self-heating on some common analogue circuits in a 0.7 μm PD SOI technology, both from measurements and from SPICE simulations using a new SOI MOSFET model (STAG v2.0)