• DocumentCode
    2173961
  • Title

    Crystalline structure and mechanical properties of Bi2Te 3-based profiled crystals grown by direct crystallization method

  • Author

    Manyakin, S.M. ; Volkov, M.P.

  • Author_Institution
    Crystal Co. Ltd, Korolev, Russia
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    125
  • Lastpage
    127
  • Abstract
    Crystalline structure peculiarities of Bi2Te3-based thermoelectric materials grown in the form of flat plates by the direct crystallization method are examined. Values of the critical parameter (G/V)cr under which the structure perfection of growing crystals becomes poor are estimated. Experimental results of mechanical tension, compression and bending tests carried out in different crystallographic orientations are presented. It is shown that the mechanical characteristics of materials are closely connected with crystalline structure
  • Keywords
    bending; bismuth compounds; compressive testing; crystal growth from melt; crystal structure; crystallisation; semiconductor growth; semiconductor materials; tensile testing; thermoelectricity; Bi2Te3; Bi2Te3-based thermoelectric materials; bending tests; compression tests; critical parameter; crystalline structure; crystallographic orientation; direct crystallization method; flat plates; mechanical characteristics; mechanical properties; mechanical tension tests; profiled crystals; structure perfection; Bismuth; Constitution; Crystalline materials; Crystallization; Crystallography; Mechanical factors; Tellurium; Temperature; Testing; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
  • Conference_Location
    Beijing
  • ISSN
    1094-2734
  • Print_ISBN
    0-7803-7205-0
  • Type

    conf

  • DOI
    10.1109/ICT.2001.979838
  • Filename
    979838
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2173961