Title :
Thermoelectric properties of Bi2Te3-related materials prepared by pulse-current hot-pressing
Author :
Kitagawa, Hiroyuki ; Shinohara, Yui ; Kitamura, Toshihiro ; Noda, Yasutoshi
Author_Institution :
Dept. of Mater. Sci., Shimane Univ., Matsue, Japan
Abstract :
Hot-press deformation was performed for Bi2Te3 -related samples. The ingots as the source material were grown by the Bridgman method with the nominal compositions of Bi0.5Sb 1.5Te3 and Bi2Te2.85Se0.15 A disk cut from the ingot was deformed by hot-pressing under pulse-current heating. The crystal structures of the deformed samples were identified by X-ray diffraction. All diffraction peaks were assigned to Bi2Te3-type structure and the patterns indicate the samples were oriented in the hexagonal (00·l) plane. The Hall effect measurements indicate that the carrier concentration of the samples is in the order of magnitude of 1025 m-3 in the temperature range of 80 to 300 K. The power factor after the deformation exceeds those for the source ingots. The results indicate that the hot-press deformation can be expected to enhance thermoelectric properties of Bi2Te3-related materials
Keywords :
Hall effect; X-ray diffraction; bismuth compounds; carrier density; crystal structure; deformation; hot pressing; semiconductor growth; semiconductor materials; thermoelectricity; 80 to 300 K; Bi0.5Sb1.5Te3; Bi2Te2.85Se0.15; Bi2Te3-related materials; Bridgman-grown source ingots; Hall effect; X-ray diffraction; XRD; carrier concentration; crystal structure; hot-press deformation; power factor; pulse-current hot-pressing; thermoelectric properties; Bismuth; Composite materials; Hall effect; Heating; Power measurement; Reactive power; Tellurium; Temperature distribution; Thermoelectricity; X-ray diffraction;
Conference_Titel :
Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-7205-0
DOI :
10.1109/ICT.2001.979839
