DocumentCode
2174021
Title
Anomalous optical characteristics of InGaAsP on GaAs substrates grown by MOVPE
Author
Ono, Kenichi ; Takemi, Masayoshi ; Nishimura, Takashi
Author_Institution
High Frequency Opt. Device Works, Mitsubishi Electr. Corp., Itami, Japan
fYear
2005
fDate
8-12 May 2005
Firstpage
378
Lastpage
380
Abstract
The mechanism of immiscibility of InGaAsP grown by MOVPE has been investigated. Anomalous optical characteristics which are related to the spinodal decomposition are revealed, and growth condition dependence of this phenomenon has been examined in detail.
Keywords
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; photoluminescence; solubility; spinodal decomposition; vapour phase epitaxial growth; GaAs; InGaAsP-GaAs; MOVPE; anomalous optical characteristics; growth condition dependence; immiscibility; photoluminescence characteristics; spinodal decomposition; Diode lasers; Epitaxial growth; Epitaxial layers; Frequency; Gallium arsenide; Lattices; Optical materials; Substrates; Temperature; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517506
Filename
1517506
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