• DocumentCode
    2174041
  • Title

    Stressless zone-melting method with self-reflected heating equipment

  • Author

    Wang, Fengyue ; Shen, Zhigang ; Yu, Xiufa ; Wu, Hutong

  • Author_Institution
    Inst. of Power Sources, Tianjin, China
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    136
  • Lastpage
    138
  • Abstract
    When binary or ternary bismuth telluride alloy is in the process of condensation and crystallization, a radial temperature gradient yields a multicircular internal stress distribution, which is the main reason for initiating the breakage of the ingot and cutting column element. Setting up the radial isothermal layer and a reasonable axial temperature gradient is beneficial for the homogenous growth of bismuth telluride alloy and preventing destructive stress formation during the ingot zone-melting process. By combining the IR reflection tube and special narrow melting zone heating furnace together, we build up an auxiliary temperature field for the ingot micro organizational homogenous formation. This combination contributes to the improvement of the material intensity and thermoelectricity
  • Keywords
    bismuth compounds; condensation; crystallisation; internal stresses; semiconductor growth; semiconductor materials; temperature distribution; thermoelectricity; zone melting; BiTe; BiTe-based materials; IR reflection tube; auxiliary temperature field; axial temperature gradient; condensation; crystallization; homogenous growth; multicircular internal stress distribution; narrow melting zone heating furnace; radial isothermal layer; radial temperature gradient; self-reflected heating equipment; stressless zone-melting method; thermoelectricity; Bismuth; Crystallization; Furnaces; Heating; Internal stresses; Isothermal processes; Reflection; Temperature distribution; Thermal stresses; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
  • Conference_Location
    Beijing
  • ISSN
    1094-2734
  • Print_ISBN
    0-7803-7205-0
  • Type

    conf

  • DOI
    10.1109/ICT.2001.979841
  • Filename
    979841