DocumentCode
2174063
Title
Effects of surface morphology and strain state of InAlGaP matrices on the growth of InP quantum dots by metalorganic chemical vapor deposition
Author
Zhang, X.B. ; Ryou, J.-H. ; Walter, G. ; Holonyak, N., Jr. ; Dupuis, R.D.
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2005
fDate
8-12 May 2005
Firstpage
385
Lastpage
388
Abstract
InP self-assembled QDs were grown on InAlGaP matrices by MOCVD. Effects of the matrix surface morphology, the strain and its relaxation in the matrix on the morphology and luminescence properties of InP QDs were studied.
Keywords
III-V semiconductors; MOCVD; indium compounds; luminescence; semiconductor quantum dots; surface morphology; InAlGaP matrices; InP self-assembled quantum dot growth; luminescence properties; metalorganic chemical vapor deposition; strain; surface morphology; Capacitive sensors; Chemical vapor deposition; Gallium arsenide; Indium phosphide; MOCVD; Quantum dots; Quantum well lasers; Surface morphology; Temperature; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517508
Filename
1517508
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