Title :
Effects of surface morphology and strain state of InAlGaP matrices on the growth of InP quantum dots by metalorganic chemical vapor deposition
Author :
Zhang, X.B. ; Ryou, J.-H. ; Walter, G. ; Holonyak, N., Jr. ; Dupuis, R.D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
InP self-assembled QDs were grown on InAlGaP matrices by MOCVD. Effects of the matrix surface morphology, the strain and its relaxation in the matrix on the morphology and luminescence properties of InP QDs were studied.
Keywords :
III-V semiconductors; MOCVD; indium compounds; luminescence; semiconductor quantum dots; surface morphology; InAlGaP matrices; InP self-assembled quantum dot growth; luminescence properties; metalorganic chemical vapor deposition; strain; surface morphology; Capacitive sensors; Chemical vapor deposition; Gallium arsenide; Indium phosphide; MOCVD; Quantum dots; Quantum well lasers; Surface morphology; Temperature; US Department of Transportation;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517508
