Title :
Synthesis of n-type PbTe by powder metallurgy
Author :
Gelbstein, Y. ; Dashevsky, Z. ; Dariel, M.P.
Author_Institution :
Dept. of Mater. Eng., Ben-Gurion Univ. of the Negev, Beer-Sheva, Israel
Abstract :
Homogeneous and graded PbTe samples doped with PbI2 were prepared using powder metallurgical techniques. The samples were examined by SEM, EDS, XRD, and their transport properties were determined. The preparation procedures were optimized with respect to powder particle size, compaction pressure, and sintering parameters. Dopant concentration profiles for optimal power factor in the 50 to 500°C temperature range were calculated on the basis of the experimentally determined transport measurements results
Keywords :
IV-VI semiconductors; X-ray diffraction; densification; doping profiles; electrical resistivity; functionally graded materials; lead compounds; particle size; powder technology; scanning electron microscopy; semiconductor growth; sintering; thermoelectricity; 50 to 500 degC; EDS; PbTe:PbI2; SEM; XRD; compaction pressure; dopant concentration profile; functionally graded samples; homogeneous samples; n-PbTe:PbI2; optimal power factor; powder metallurgy; powder particle size; preparation procedure; sintering parameters; thermoelectric material; transport properties; Argon; Atmosphere; Compaction; Inorganic materials; Inspection; Lead compounds; Powders; Tellurium; Temperature distribution; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-7205-0
DOI :
10.1109/ICT.2001.979843
