Synthesis of n-type PbTe by powder metallurgy

Author

Gelbstein, Y. ; Dashevsky, Z. ; Dariel, M.P.

Author_Institution

Dept. of Mater. Eng., Ben-Gurion Univ. of the Negev, Beer-Sheva, Israel

fYear

2001

fDate

2001

Firstpage

143

Lastpage

149

Abstract

Homogeneous and graded PbTe samples doped with PbI₂ were prepared using powder metallurgical techniques. The samples were examined by SEM, EDS, XRD, and their transport properties were determined. The preparation procedures were optimized with respect to powder particle size, compaction pressure, and sintering parameters. Dopant concentration profiles for optimal power factor in the 50 to 500°C temperature range were calculated on the basis of the experimentally determined transport measurements results

Keywords

IV-VI semiconductors; X-ray diffraction; densification; doping profiles; electrical resistivity; functionally graded materials; lead compounds; particle size; powder technology; scanning electron microscopy; semiconductor growth; sintering; thermoelectricity; 50 to 500 degC; EDS; PbTe:PbI₂; SEM; XRD; compaction pressure; dopant concentration profile; functionally graded samples; homogeneous samples; n-PbTe:PbI₂; optimal power factor; powder metallurgy; powder particle size; preparation procedure; sintering parameters; thermoelectric material; transport properties; Argon; Atmosphere; Compaction; Inorganic materials; Inspection; Lead compounds; Powders; Tellurium; Temperature distribution; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on

Conference_Location

Beijing

ISSN

1094-2734

Print_ISBN

0-7803-7205-0

Type

conf

DOI

10.1109/ICT.2001.979843

Filename

979843