DocumentCode
2174131
Title
An overview of non-volatile memory technology and the implication for tools and architectures
Author
Li, Hai ; Chen, Yiran
Author_Institution
Alternative Technol. Group, Seagate Technol. LLC, Bloomington, MN
fYear
2009
fDate
20-24 April 2009
Firstpage
731
Lastpage
736
Abstract
Novel nonvolatile memory technologies are gaining significant attentions from semiconductor industry in the competition of universal memory development. We used spin-transfer torque random access memory (STT-RAM) and resistive random access memory (R-RAM) as examples to discuss the implication of emerging nonvolatile memory for tools and architectures. Three aspects, including device and memory cell modeling, device/circuit co-design consideration and novel memory architecture, are discussed in details. The goal of these discussions is to design a high-density, low-power, high-performance nonvolatile memory with simple architecture and minimized circuit design complexity.
Keywords
random-access storage; semiconductor device models; R-RAM; STT-RAM; nonvolatile memory technology; resistive random access memory; spin-transfer torque random access memory; Circuit synthesis; Magnetic switching; Magnetic tunneling; Magnetization; Memory architecture; Nonvolatile memory; Phase change memory; Random access memory; Space technology; Torque; MTJ device modleing; R-RAM; STT-RAM; Universal memory; memory yield improvement;
fLanguage
English
Publisher
ieee
Conference_Titel
Design, Automation & Test in Europe Conference & Exhibition, 2009. DATE '09.
Conference_Location
Nice
ISSN
1530-1591
Print_ISBN
978-1-4244-3781-8
Type
conf
DOI
10.1109/DATE.2009.5090761
Filename
5090761
Link To Document