• DocumentCode
    2174131
  • Title

    An overview of non-volatile memory technology and the implication for tools and architectures

  • Author

    Li, Hai ; Chen, Yiran

  • Author_Institution
    Alternative Technol. Group, Seagate Technol. LLC, Bloomington, MN
  • fYear
    2009
  • fDate
    20-24 April 2009
  • Firstpage
    731
  • Lastpage
    736
  • Abstract
    Novel nonvolatile memory technologies are gaining significant attentions from semiconductor industry in the competition of universal memory development. We used spin-transfer torque random access memory (STT-RAM) and resistive random access memory (R-RAM) as examples to discuss the implication of emerging nonvolatile memory for tools and architectures. Three aspects, including device and memory cell modeling, device/circuit co-design consideration and novel memory architecture, are discussed in details. The goal of these discussions is to design a high-density, low-power, high-performance nonvolatile memory with simple architecture and minimized circuit design complexity.
  • Keywords
    random-access storage; semiconductor device models; R-RAM; STT-RAM; nonvolatile memory technology; resistive random access memory; spin-transfer torque random access memory; Circuit synthesis; Magnetic switching; Magnetic tunneling; Magnetization; Memory architecture; Nonvolatile memory; Phase change memory; Random access memory; Space technology; Torque; MTJ device modleing; R-RAM; STT-RAM; Universal memory; memory yield improvement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design, Automation & Test in Europe Conference & Exhibition, 2009. DATE '09.
  • Conference_Location
    Nice
  • ISSN
    1530-1591
  • Print_ISBN
    978-1-4244-3781-8
  • Type

    conf

  • DOI
    10.1109/DATE.2009.5090761
  • Filename
    5090761