DocumentCode :
2174241
Title :
Deep levels characterization in high temperature iron implanted InP
Author :
Fraboni, B. ; Gasparotto, A. ; Cesca, T. ; Verna, A. ; Impellizzeri, G. ; Priolo, F.
Author_Institution :
Dipt. di Fisica, Bologna Univ., Italy
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
410
Lastpage :
413
Abstract :
We have investigated the electrical activation of Fe implanted in InP in different concentrations and we have characterized by DLTS and by C-V analyses the electrical activity of the deep levels present in the band gap.
Keywords :
III-V semiconductors; deep level transient spectroscopy; deep levels; energy gap; impurity states; indium compounds; iron; C-V analysis; DLTS; InPFe; band gap; deep level; electrical activity; high temperature iron implanted InP; Atom optics; Capacitance-voltage characteristics; Doping; Indium phosphide; Iron; Lattices; Optical materials; Photonic band gap; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517514
Filename :
1517514
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2174241
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