Title :
Investigation of Zn diffusion into InP which preliminary thermal treated in nitrogen atmosphere
Author :
Akhmedova, M. ; Smirnov, A.S.
Author_Institution :
Phys.-Tech. Inst. Acad. of Sci., Uzbekistan
Abstract :
Preliminary thermal treatment of InP in nitrogen atmosphere before Zn diffusion process creates thin protective layer on the surface of semiconductor, which prevent evaporation of P and by this it reduces degradation of surface layer.
Keywords :
III-V semiconductors; diffusion; evaporation; indium compounds; protective coatings; zinc; InP; InPZn; Zn diffusion; evaporation; nitrogen atmosphere; semiconductor surface degradation; thin protective layer; Atmosphere; Diffusion processes; Heat treatment; Hydrogen; Indium phosphide; Nitrogen; Protection; Surface treatment; Thermal degradation; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517515
