DocumentCode
2174311
Title
Synthesis and thermoelectric properties of Co-based oxide whiskers
Author
Funahashi, Ryoji ; Matsubara, Ichiro ; Ikuta, Hiroshi ; Takeuchi, Tsunehiro ; Mizutani, Uichiro
Author_Institution
Nat. Inst. of Adv. Ind. Sci. & Technol., Osaka, Japan
fYear
2001
fDate
2001
Firstpage
180
Lastpage
183
Abstract
Two kinds of single crystalline whiskers of (Bi2Sr2O4)x(CoO2) 2 (BC-222) and (Ca2CoO3)xCoO 2 (Co-225) phases were grown from the surfaces of precursor plates by annealing in an O2 gas flow. The phases of the whiskers can be controlled by the Co content of the precursor plates. The average compositions of the whiskers are Bi3.0(Sr, Ca) 3.1Co2.0O9+δ and (Ca, Sr, Bi)1.9Co2.0O5+δ for the BC-222 and the Co-225, respectively. Although the Co-225 whiskers are 1.2 mm at the longest, the BC-222 whiskers reach lengths of as much as 1.0 cm. The difference in the whisker length is due to the microstructure of the precursor plates. Seebeck coefficient and resistivity of both whiskers are higher than 200 μVK-1 and suppressed to a few mΩcm at high temperature in air, respectively. These phases seem to have pseudogap at the Fermi level. κ of polycrystalline samples of both phases is suppressed to low values at high temperature. These oxides are promising thermoelectric materials for high temperature application
Keywords
Fermi level; Seebeck effect; annealing; bismuth compounds; cobalt compounds; electrical resistivity; metal-insulator transition; strontium compounds; thermoelectric power; whiskers (crystal); 1.0 cm; 1.2 mm; Bi2Sr2O4(CoO2)2 ; Co content; Fermi level; Seebeck coefficient; annealing; metal-insulator transition; microstructure; polycrystalline samples; pseudogap; resistivity; single crystalline whiskers; thermoelectric materials; Annealing; Bismuth; Conducting materials; Crystallization; Powders; Power generation; Scanning electron microscopy; Strontium; Temperature; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
Conference_Location
Beijing
ISSN
1094-2734
Print_ISBN
0-7803-7205-0
Type
conf
DOI
10.1109/ICT.2001.979856
Filename
979856
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