Title :
The effect of rapid thermal annealing on GaAsSbN quantum-well and GaAsSbN bulk lattice-matched to GaAs
Author :
Wicaksono, S. ; Yoon, S.F. ; Fan, W.J. ; Loke, W.K.
Author_Institution :
Clean Room & Characterization Lab., Nanyang Technol. Univ., Singapore
Abstract :
Study on strained QW GaAsSbN/GaAs reveals optimum annealing temperature at 700°C. In contrast, bulk GaAsSbN lattice-matched to GaAs shows minimal energy bandgap shift and intensity improvement between the annealing temperatures range of 450°C-850°C.
Keywords :
III-V semiconductors; antimony compounds; arsenic compounds; gallium compounds; photoluminescence; rapid thermal annealing; semiconductor quantum wells; wide band gap semiconductors; 450 to 850 C; GaAs; GaAsSbN-GaAs; bulk GaAsSbN; energy bandgap shift; energy intensity; lattice-matched GaAsSbN quantum-well; photoluminescence; rapid thermal annealing; Gallium arsenide; Lattices; Photonic band gap; Plasma measurements; Plasma temperature; Quantum wells; Radio frequency; Rapid thermal annealing; Solids; Temperature measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517518
