DocumentCode
2174322
Title
The effect of rapid thermal annealing on GaAsSbN quantum-well and GaAsSbN bulk lattice-matched to GaAs
Author
Wicaksono, S. ; Yoon, S.F. ; Fan, W.J. ; Loke, W.K.
Author_Institution
Clean Room & Characterization Lab., Nanyang Technol. Univ., Singapore
fYear
2005
fDate
8-12 May 2005
Firstpage
421
Lastpage
423
Abstract
Study on strained QW GaAsSbN/GaAs reveals optimum annealing temperature at 700°C. In contrast, bulk GaAsSbN lattice-matched to GaAs shows minimal energy bandgap shift and intensity improvement between the annealing temperatures range of 450°C-850°C.
Keywords
III-V semiconductors; antimony compounds; arsenic compounds; gallium compounds; photoluminescence; rapid thermal annealing; semiconductor quantum wells; wide band gap semiconductors; 450 to 850 C; GaAs; GaAsSbN-GaAs; bulk GaAsSbN; energy bandgap shift; energy intensity; lattice-matched GaAsSbN quantum-well; photoluminescence; rapid thermal annealing; Gallium arsenide; Lattices; Photonic band gap; Plasma measurements; Plasma temperature; Quantum wells; Radio frequency; Rapid thermal annealing; Solids; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517518
Filename
1517518
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