DocumentCode :
2174349
Title :
Dynamics of carrier-capture processes in Ga0.47In0.53As/InP near-surface quantum wells
Author :
Symonds, Clémentine ; Mangeney, Juliette ; Saint-Girons, Guillaume ; Sagnes, Isabelle ; Meunier, Karine ; Garnache, Arnaud
Author_Institution :
Inst. d´´Electronique Fondamentale, Univ. de Paris-Sud, Orsay, France
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
424
Lastpage :
426
Abstract :
Ga0.47In0.53As/InP single-quantum wells with thin top barrier layers of InP and InAlAs have been studied by pump-probe experiments and photoluminescence spectroscopy. The excitonic lifetime is reduced by a fast trapping mechanism of carriers into surface states.
Keywords :
III-V semiconductors; aluminium compounds; electron traps; gallium arsenide; hole traps; indium compounds; photoluminescence; semiconductor quantum wells; surface recombination; surface states; Ga0.47In0.53As-InP; InAlAs; barrier layers; carrier trapping mechanism; carrier-capture processes; excitonic lifetime; near-surface single quantum wells; photoluminescence spectroscopy; pump-probe experiment; surface states; Charge carriers; Delay effects; Gallium arsenide; Indium compounds; Indium gallium arsenide; Indium phosphide; Photoluminescence; Radiative recombination; Spectroscopy; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517519
Filename :
1517519
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2174349
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