DocumentCode :
2174406
Title :
Avalanche noise in In0.53Ga0.47As avalanching regions
Author :
Goh, Y.L. ; Tan, C.H. ; Ng, J.S. ; Ng, W.K. ; David, J.P.R.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
428
Lastpage :
431
Abstract :
Pure electron injection multiplication noise of In0.53Ga0.47As has been measured on three In0.53Ga0.47As diode with avalanche widths of 1.8 μm, 3.2 μm and 4.8 μm. Very low excess noise has been measured and the associated electron to hole ionisation coefficient ratio is from 3.3 to 5. The results confirm the previously reported large ionisation coefficient ratios at fields between 155 kVcm-1 and 310 kVcm-1.
Keywords :
III-V semiconductors; avalanche photodiodes; electron impact ionisation; gallium arsenide; indium compounds; semiconductor device noise; In0.53Ga0.47As; In0.53Ga0.47As diode; avalanche noise region; electron injection multiplication noise; electron ionisation coefficient ratio; hole ionisation coefficient ratio; Charge carrier processes; Electrons; Impact ionization; Indium phosphide; Noise measurement; P-i-n diodes; PIN photodiodes; Photoconductivity; Signal to noise ratio; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517521
Filename :
1517521
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2174406
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