• DocumentCode
    2174427
  • Title

    Thermoelectric property of (Ca,M)TiO3 by ab initio calculation

  • Author

    Isobe, T. ; Sugihara, S. ; Minowa, A. ; Katanahara, H.

  • Author_Institution
    Dept. of Mater. Sci. & Ceramic Technol., Shonan Inst. of Technol., Fujisawa, Japan
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    191
  • Lastpage
    194
  • Abstract
    We study the thermoelectric property of CaTiO3 by electronic structure calculations. CaTiO3 is an insulator with a high band gap possessing low electrical and thermal conductivity. The DV-X a (discrete variational-X a) method is used. The calculation needs atomic number, position of atoms, kind of atoms and symmetry data for the cluster. We calculated the perovskite type of calcium titanate (CaTiO3). This cluster, with transition metal-additions (Ca,M)TiO3 forms p-type and n-type semiconductors possessing impurity energy levels of the donor and acceptor between the HOMO (highest occupied molecular orbital) and LUMO (lowest unoccupied molecular orbital). We assumed the Seebeck coefficient depends on the energy gap based on the computer simulation of Sugihara et al. (1999). We substituted Sr and Nb for Ti in CaTiO3 and the Seebeck coefficient was calculated from HOMO, LUMO level and the impurity levels. Then the Seebeck coefficient at 500 K was calculated to be 7166 μ V/K for CaTiO3, 1806 μ V/K for Nb-added CaTiO3 and 896 μ V/K for Sr-added CaTiO3, respectively
  • Keywords
    Seebeck effect; Xalpha calculations; ab initio calculations; calcium compounds; electronic density of states; energy gap; impurity states; insulating materials; niobium; semiconductor materials; strontium; 500 K; CaTiO3; CaTiO3:Nb; CaTiO3:Sr; DV-X a method; HOMO; LUMO; Seebeck coefficient; ab initio calculation; discrete variational-X a; energy gap; impurity energy levels; insulators; n-type semiconductor; p-type semiconductor; perovskite structure; thermoelectric materials; transition metal-additions; Calcium; Computer simulation; Dielectrics and electrical insulation; Energy states; Orbital calculations; Photonic band gap; Semiconductor impurities; Thermal conductivity; Thermoelectricity; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
  • Conference_Location
    Beijing
  • ISSN
    1094-2734
  • Print_ISBN
    0-7803-7205-0
  • Type

    conf

  • DOI
    10.1109/ICT.2001.979862
  • Filename
    979862