Studies on hot carrier-induced degradation on RF performance in InP/InGaAs double heterojunction bipolar transistors

Author

Ng, Chai-Wah ; Wang, Hong ; Zeng, Rong

Author_Institution

Microelectron. Centre, Nanyang Technol. Univ., Singapore

fYear

2005

fDate

8-12 May 2005

Firstpage

434

Lastpage

436

Abstract

Hot carrier stress was performed at room temperature on InP/InGaAs/InP DHBTs by reverse biasing the base-collector junction under open emitter conditions. The effects on the DC, microwave and noise characteristics were investigated. The stress-induced damages were observed in both base-emitter and base-collector junctions. The increase in the base resistance after the hot carrier stress is the main factor that determines the NF_min and R_n values. The hot carrier induced damage in the base region is further characterized by the current transient technique.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; hot carriers; indium compounds; microwave bipolar transistors; semiconductor device noise; semiconductor heterojunctions; transients; 293 to 298 K; DC; InP-InGaAs; InP-InGaAs double heterojunction bipolar transistors; RF performance; base resistance; base-collector junction; base-emitter junction; current transient technique; hot carrier stress-induced damages; microwave characteristics; noise characteristics; Degradation; Doping; Double heterojunction bipolar transistors; Heterojunction bipolar transistors; Hot carriers; Indium gallium arsenide; Indium phosphide; Noise measurement; Radio frequency; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2005. International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8891-7

Type

conf

DOI

10.1109/ICIPRM.2005.1517523

Filename

1517523