Title :
Design and performance of InP/GaInAs/InP abrupt DHBTs
Author :
Elias, D. Cohen ; Kraus, S. ; Gavrilov, A. ; Cohen, S. ; Buadana, N. ; Sidorov, V. ; Ritter, D.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa
Abstract :
We discuss the field collapse threshold in abrupt DHBTs in which the barrier between the base and the collector is eliminated by delta doping. A DHBT with 150 nm thick collector operating at a current density of 4 mA/mum2 is presented. We show theoretically that the carrier density at the onset of the filed collapse effect can be doubled by inserting an additional delta doped layer at the center of the collector
Keywords :
III-V semiconductors; carrier density; current density; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device models; semiconductor doping; DHBT; InP-GaInAs-InP; carrier density; collapse effect; current density; delta doping; Aluminum; Charge carrier density; Critical current density; Current density; Doping; Double heterojunction bipolar transistors; Frequency; Indium phosphide; Voltage; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517528
