• DocumentCode
    2174695
  • Title

    Intermetallic phase formation and growth kinetics at the interface between molten solder and Ni-containing under bump metallization

  • Author

    Su, Peng ; Korhonen, Tia ; Korhonen, Matt ; Li, Che-Yu

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Cornell Univ., Ithaca, NY, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    1712
  • Lastpage
    1718
  • Abstract
    Direct Chip Attach (DCA) of Si chips to an organic substrate requires modification to the conventional Cu based Under Bump Metallization (UBM). Ni-containing UBM´s have proven to be able to effectively reduce the intermetallic compound growth rate, which in turn reduces the consumption of the wetting metals in the UBM during the reaction between the solder and the UBM. In this research, the microstructure evolution of the interface between molten eutectic Pb/Sn solder and several alloy-foils with different Cu/Ni ratios is studied. The experimental results show that the low diffusivity and dissolution rate of Ni play important roles in restricting the growth of the intermetallic and changing the interface morphology. A kinetic model is proposed for the Intermetallic Compound (IMC) growth based on the Cu-Ni/solder reaction, and is applied to analyze the data from UBM/solder experiments
  • Keywords
    chemical interdiffusion; copper alloys; flip-chip devices; lead alloys; metallisation; nickel alloys; soldering; tin alloys; Cu/Ni alloy foil; CuNi-PbSn; Pb/Sn molten eutectic solder; Si chip; diffusivity; direct chip attach; dissolution rate; flip-chip technology; growth kinetics; interface microstructure; intermetallic compound formation; organic substrate; reaction model; under bump metallization; wetting metal; Copper alloys; Intermetallic; Kinetic theory; Materials science and technology; Metallization; Microstructure; Nickel alloys; Silicon; Temperature; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components & Technology Conference, 2000. 2000 Proceedings. 50th
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-7803-5908-9
  • Type

    conf

  • DOI
    10.1109/ECTC.2000.853451
  • Filename
    853451