DocumentCode
2174711
Title
Analysis of lateral current spreading in collector of submicron HBT
Author
Watanabe, Yasuhiro ; Qiu, Wei-Bin ; Miyamot, Yasuyuki ; Furuya, Kazuhito
Author_Institution
Dept. of Phys. Electron., Tokyo Inst. of Technol.
fYear
2005
fDate
8-12 May 2005
Firstpage
460
Lastpage
463
Abstract
Recently, InP HBTs with submicron emitter showed high cutoff frequency. In this simulation, cutoff frequency when emitter width was around collector thickness is analyzed and possibility of smaller transit time in narrower emitter is pointed out
Keywords
III-V semiconductors; heterojunction bipolar transistors; indium compounds; semiconductor device models; InP; InP HBT; current spreading; cutoff frequency; narrower emitter; submicron emitter; transit time; Analytical models; Contact resistance; Current density; Cutoff frequency; Delay estimation; Electrons; Heterojunction bipolar transistors; Indium phosphide; Kirk field collapse effect; Proximity effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location
Glasgow, Scotland
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517531
Filename
1517531
Link To Document