DocumentCode
2174749
Title
Prediction method for the bandgap profiles of InGaAsP multiple quantum well structures fabricated by selective area metal-organic vapor phase epitaxy
Author
Shioda, Tomonari ; Sugiyama, Masakazu ; Shimogaki, Yukihiro ; Nakano, Yoshiaki
Author_Institution
Sch. of Eng., Tokyo Univ.
fYear
2005
fDate
8-12 May 2005
Firstpage
464
Lastpage
467
Abstract
We simulated the bandgap distribution of InGaAsP MQWs grown by selective-area MOVPE based on vapor-phase diffusion model. The accuracy of the simulation was sufficient for the design of integrated semiconductor optical devices
Keywords
III-V semiconductors; MOCVD; energy gap; gallium arsenide; indium compounds; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; InGaAsP; InGaAsP multiple quantum well structure; bandgap; integrated semiconductor optical device; selective area metal-organic vapor phase epitaxy; vapor-phase diffusion model; Electronic mail; Epitaxial growth; Epitaxial layers; Monolithic integrated circuits; Optical devices; Photonic band gap; Prediction methods; Quantum well devices; Semiconductor optical amplifiers; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location
Glasgow, Scotland
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517532
Filename
1517532
Link To Document