Title :
Effect of temperature and substrate misorientation on the surface reaction kinetics of selective area MOVPE
Author :
Song, Haizheng ; Song, Xueliang ; Sugiyama, Masakazu ; Nakano, Yoshiaki ; Shimogaki, Yukihiro
Abstract :
In order to design the selective-area metal-organic vapor phase epitaxy (MOVPE) processes, the surface reaction rate constant of a Ga-precursor was investigated as a function of temperature, substrate misorientation, and the partial pressures of precursors
Keywords :
MOCVD; reaction rate constants; surface chemistry; vapour phase epitaxial growth; Ga-precursor; partial pressure; selective area MOVPE; substrate misorientation; surface reaction kinetics; surface reaction rate constant; Dielectric substrates; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium phosphide; Kinetic theory; Materials science and technology; Optical device fabrication; Quantum well devices; Temperature dependence;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517533
