DocumentCode
2174872
Title
Surface kinetics in MOVPE of InP and InGaP analyzed by flow modulation method
Author
Nakano, Takayuki ; Sugiyama, Masakazu ; Nakano, Yoshiaki ; Shimogaki, Yukihiro
fYear
2005
fDate
8-12 May 2005
Firstpage
479
Lastpage
482
Abstract
By the flow modulation growth, we suggest the existence of an intermediate layer at the surface of InP and InGaP during the growth. Its transient behavior was analyzed in connection to the surface segregation phenomena
Keywords
III-V semiconductors; MOCVD; gallium compounds; indium compounds; semiconductor growth; surface segregation; vapour phase epitaxial growth; InGaP; InP; MOVPE; flow modulation method growth; surface kinetics; surface segregation phenomena; transient behavior; Atomic layer deposition; Crystallization; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium phosphide; Kinetic theory; Materials science and technology; Stress; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location
Glasgow, Scotland
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517536
Filename
1517536
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