An 0.5–6GHz ultra-wideband low noise amplifier design

Author

Lianjuan, Tao ; Jingfu, Bao

Author_Institution

Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2011

fDate

9-11 Sept. 2011

Firstpage

2516

Lastpage

2519

Abstract

In this letter, the design of a compact, two-stage, low noise, unconditionally stable, amplifier from 0.5 to 6 GHz is discussed. To achieve its wide-band characteristics, a novel matching mechanism is proposed, which consists of lumped-elements and micro-strip lines. The amplifier is designed around the HEMT FHX35LG and the PHEMT ATF-54143. The negative feedback technique is also adopted to border the frequency band, and the software ADS is used to optimize design and the whole matching network. In the covered band, the amplifier provides more than 18 dB gain, gain-flatness of less than ±1 dB, noise figure of less than 3.5 dB, linear output power (P_-1dB) of more than 20 dBm.

Keywords

feedback; high electron mobility transistors; low noise amplifiers; microstrip lines; ultra wideband technology; wideband amplifiers; ATF-54143; FHX35LG; PHEMT; compact design; covered band; frequency 0.5 GHz to 6 GHz; frequency band; gain-flatness; linear output power; lumped-elements; matching mechanism; matching network; microstrip lines; negative feedback technique; noise figure; software ADS; ultra-wideband low noise amplifier design; unconditionally stable amplifier; wide-band characteristics; Circuit stability; Gain; Negative feedback; Noise; Noise figure; Radio frequency; Stability analysis; low noise; negative feedback; ultra wide-band; wideband matching;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Communications and Control (ICECC), 2011 International Conference on

Conference_Location

Ningbo

Print_ISBN

978-1-4577-0320-1

Type

conf

DOI

10.1109/ICECC.2011.6066535

Filename

6066535