• DocumentCode
    2174956
  • Title

    Copmparison of influence of rare earth elements and oxides on properties of InP for radiation detection

  • Author

    Procházková, O. ; Zdánský, K. ; Zavadil, J. ; Kozak, H.

  • Author_Institution
    Inst. of Radio Eng. & Electron., Acad. of Sci. of the Czech Republic, Prague
  • fYear
    2005
  • fDate
    8-12 May 2005
  • Firstpage
    491
  • Lastpage
    494
  • Abstract
    We have focused on the investigation of the impact of Ce, Eu, Tm, EU2O3 and Tm2O3 addition in LPE growth process on the properties of InP layers in the context of their application in detector structures
  • Keywords
    III-V semiconductors; cerium; europium; europium compounds; indium compounds; liquid phase epitaxial growth; radiation detection; semiconductor counters; semiconductor doping; semiconductor growth; thulium; thulium compounds; InP layers; InP:Ce; InP:Eu; InP:Eu2O3; InP:Tm; InP:Tm2O3; LPE growth process; detector structures; oxides; radiation detection; rare earth elements; Capacitance-voltage characteristics; Conductivity; Epitaxial layers; Hall effect; Impurities; Indium phosphide; Laboratories; Photoluminescence; Radiation detectors; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2005. International Conference on
  • Conference_Location
    Glasgow, Scotland
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8891-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2005.1517539
  • Filename
    1517539
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2174956