DocumentCode :
2174956
Title :
Copmparison of influence of rare earth elements and oxides on properties of InP for radiation detection
Author :
Procházková, O. ; Zdánský, K. ; Zavadil, J. ; Kozak, H.
Author_Institution :
Inst. of Radio Eng. & Electron., Acad. of Sci. of the Czech Republic, Prague
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
491
Lastpage :
494
Abstract :
We have focused on the investigation of the impact of Ce, Eu, Tm, EU2O3 and Tm2O3 addition in LPE growth process on the properties of InP layers in the context of their application in detector structures
Keywords :
III-V semiconductors; cerium; europium; europium compounds; indium compounds; liquid phase epitaxial growth; radiation detection; semiconductor counters; semiconductor doping; semiconductor growth; thulium; thulium compounds; InP layers; InP:Ce; InP:Eu; InP:Eu2O3; InP:Tm; InP:Tm2O3; LPE growth process; detector structures; oxides; radiation detection; rare earth elements; Capacitance-voltage characteristics; Conductivity; Epitaxial layers; Hall effect; Impurities; Indium phosphide; Laboratories; Photoluminescence; Radiation detectors; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517539
Filename :
1517539
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2174956
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