DocumentCode
2175151
Title
Porous silicon, preparation and characterization for optoelectronics applications
Author
Kleps, Irina ; Angelescu, Anca ; Garcia, Nicolas ; Serena, Pedro ; Gil, Adriana
Author_Institution
Inst. of Microtechnol., Bucharest, Romania
Volume
1
fYear
1997
fDate
7-11 Oct 1997
Firstpage
193
Abstract
Porous silicon preparation, morphology and chemical composition are evaluated in connection with the possibility of using this material for optoelectronic devices. The electroluminescence properties were determined by liquid contact during anodic oxidation of PS
Keywords
electroluminescence; elemental semiconductors; materials preparation; oxidation; porous materials; scanning electron microscopy; secondary ion mass spectra; silicon; surface structure; anodic oxidation; chemical composition; electroluminescence; morphology; optoelectronic devices; porous silicon; preparation; Atomic layer deposition; Chemicals; Composite materials; Gas insulated transmission lines; Nanoscale devices; Optoelectronic devices; Oxidation; Silicon; Surface morphology; Surface topography;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location
Sinaia
Print_ISBN
0-7803-3804-9
Type
conf
DOI
10.1109/SMICND.1997.651715
Filename
651715
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