DocumentCode
2175254
Title
A Film Bulk Acoustic Resonator (FBAR) L Band Low Noise Oscillator for Digital Communications
Author
Khanna, A.P.S. ; Gane, Ed ; Chong, Thomas ; Ko, Herb ; Bradley, Paul ; Ruby, Richard ; Larson, John D., III
Author_Institution
Wireless Semiconductor Division, Agilent Technologies, Inc., 3175 Bowers Avenue, Santa Clara, CA. 95054
fYear
2002
fDate
23-26 Sept. 2002
Firstpage
1
Lastpage
3
Abstract
This paper describes the design and measured performance of a low-noise L band oscillator based on Agilent´s Film Bulk Acoustic Resonator (FBAR) for applications in digital communication systems. This experimental oscillator demonstrated at 1951 MHz with a phase noise of - 115 dBc/Hz at 10KHz from the carrier represents the first example of a low noise Si-Bipolar FBAR oscillator.
Keywords
Acoustic noise; Ceramics; Digital communication; Film bulk acoustic resonators; Oscillators; Phase noise; Planar transmission lines; Resonant frequency; Semiconductor device noise; Surface acoustic waves;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2002. 32nd European
Conference_Location
Milan, Italy
Type
conf
DOI
10.1109/EUMA.2002.339463
Filename
4140543
Link To Document