Title :
InGaAsP SSC LD for low cost uncooled FTTH module with bandwidth over 4GHz
Author :
Kim, Young Hyun ; Bae, Yu-Dong ; Lee, Eun-Hwa ; Kim, In ; Bang, Young-Churl ; Lee, JungKee ; Oh, Yunkyung ; Jang, Dong-Hoon
Author_Institution :
Telecommun. R&D Center, Samsung Electron. Co., Suwon
Abstract :
By optimum design of spot-size converter regarding the cavity length, active volume and taper type, we achieved SSC LD with 13degtimes14deg FFP, 3.5 dB coupling loss and 3 dB bandwidth over 4 GHz applicable to uncooled E-PON FTTH modules
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical fibre subscriber loops; semiconductor diodes; 3.5 dB; InGaAsP; InGaAsP SSC LD; cavity length; fiber-to-the-home module; spot-size converter; uncooled FTTH module; Bandwidth; Capacitance; Costs; Coupling circuits; Laser modes; Optical fiber subscriber loops; Programmable control; Quantum well devices; Shape; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517554
