DocumentCode :
2175390
Title :
Nonequilibrium electron and phonon transport in heterostructures for energy conversion
Author :
Zeng, Taofang ; Chen, Gang
Author_Institution :
Dept. of Mech. & Aerosp. Eng., California Univ., Los Angeles, CA, USA
fYear :
2001
fDate :
2001
Firstpage :
331
Lastpage :
334
Abstract :
We establish the first unified model dealing with the transport of electron and phonon in double heterojunction structures with the coexistence of three nonequilibrium processes: (1) nonequilibrium among electrons, (2) nonequilibrium among phonons, and (3) nonequilibrium between electrons and phonons. Using this model, we investigate the energy conversion efficiency based on concurrent thermoelectric and thermionic effects on electrons and size effects on electrons and phonons. It is found that heterostructures can have an equivalent figure of merit higher than the corresponding bulk materials
Keywords :
electron-phonon interactions; semiconductor heterojunctions; size effect; thermionic conversion; thermoelectricity; double heterojunction structures; energy conversion; energy conversion efficiency; equivalent figure of merit; nonequilibrium electron transport; nonequilibrium phonon transport; size effects; Electron emission; Energy conversion; Heterojunctions; Particle scattering; Phonons; Power generation; Superlattices; Temperature sensors; Thermoelectricity; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
Conference_Location :
Beijing
ISSN :
1094-2734
Print_ISBN :
0-7803-7205-0
Type :
conf
DOI :
10.1109/ICT.2001.979899
Filename :
979899
Link To Document :
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