Realization of 20 GHz directly modulated 1.55 /spl mu/m DFB lasers using partially strain compensated quantum wells structures

Author

Parillaud, O. ; van Dijk, F. ; Vodjdani, N.

Author_Institution

Thales Ill-V Lab, Alcatel, Orsay

fYear

2005

fDate

8-12 May 2005

Firstpage

551

Lastpage

553

Abstract

We have realized and compared fully strained and partially strain compensated GaInAsP/InP based QW structures for the fabrication of directly modulated 1.55 mum DFB lasers. Active region containing up to 10 quantum wells were achieved and characterized using High Resolution X-Ray Diffraction (HR-XRD) and photoluminescence mapping at room temperature. DFB lasers containing 6, 8 and 10 QWs were fabricated. Bandwidth up to 20 GHz was obtained at 150 mA operation

Keywords

III-V semiconductors; X-ray diffraction; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; optical fabrication; optical modulation; optical transmitters; photoluminescence; quantum well lasers; semiconductor quantum wells; 1.55 micron; 150 mA; 20 GHz; 293 to 298 K; DFB lasers; GaInAsP-InP; active region; fully strain compensated quantum wells structures; high resolution X-ray diffraction; laser direct modulation; laser fabrication; partially strain compensated quantum well structures; photoluminescence; Bandwidth; Capacitive sensors; Holography; Indium phosphide; Laser radar; Optical materials; Photoluminescence; Quantum well lasers; Temperature; Tensile strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2005. International Conference on

Conference_Location

Glasgow, Scotland

ISSN

1092-8669

Print_ISBN

0-7803-8891-7

Type

conf

DOI

10.1109/ICIPRM.2005.1517556

Filename

1517556