In-plane thermoelectric properties of Si/Ge superlattice

Author

Liu, W.L. ; Borca-Tasciuc, T. ; Liu, J.L. ; Taka, K. ; Wang, K.L. ; Dresselhaus, M.S. ; Chen, G.

Author_Institution

Dept. of Mech. & Aerosp. Eng., California Univ., Los Angeles, CA, USA

fYear

2001

fDate

2001

Firstpage

340

Lastpage

343

Abstract

In this paper we report experimental investigation of the in-plane thermoelectric properties of Si/Ge superlattices grown on silicon-on-insulator wafers. A two-wire 3ω method was employed to measure the in-plane thermal conductivity of the superlattice sample investigated. The in-plane Seebeck coefficient and electrical conductivity of the same sample are also measured. Experimental data are compared with the results of theoretical models of carrier transport based on carrier pocket engineering and partial diffuse phonon interface scattering

Keywords

Seebeck effect; elemental semiconductors; germanium; semiconductor superlattices; silicon; thermal conductivity; thermoelectricity; Si-Ge; Si/Ge superlattice; carrier pocket engineering; carrier transport; electrical conductivity; in-plane Seebeck coefficient; in-plane thermal conductivity; in-plane thermoelectric properties; partial diffuse phonon interface scattering; silicon-on-insulator wafers; Conductivity measurement; Data engineering; Electric variables measurement; Phonons; Scattering; Semiconductor device modeling; Silicon on insulator technology; Superlattices; Thermal conductivity; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on

Conference_Location

Beijing

ISSN

1094-2734

Print_ISBN

0-7803-7205-0

Type

conf

DOI

10.1109/ICT.2001.979901

Filename

979901