Effects of substrate temperature on thermoelectric properties of amorphous Si/Ge thin films

Author

Lee, Sang Min ; Okamoto, Yoichi ; Kawahara, Toshio ; Morimoto, Jun

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Defense Acad., Kanagawa, Japan

fYear

2001

fDate

2001

Firstpage

348

Lastpage

351

Abstract

We intended to control the degree of amorphousness with the substrate temperature. Amorphous thin films were prepared by the alternate deposition of Ge, doped heavily with Au, and Si in an ultrahigh vacuum chamber. In this paper, we compare the thermoelectric properties of amorphous Si/Ge thin films deposited on the substrate at 77 K and room temperature. The power factor of the sample deposited on the substrate at 77 K increases by the thermal annealing compared to that of the sample deposited at room temperature

Keywords

amorphous semiconductors; elemental semiconductors; germanium; gold; heavily doped semiconductors; semiconductor superlattices; silicon; thermoelectricity; vacuum deposited coatings; 300 K; 77 K; Si-Ge:Au; a-Si/Ge:Au; amorphous Si/Ge thin films; power factor; substrate temperature; thermal annealing; thermoelectric properties; ultrahigh vacuum chamber; Amorphous materials; Annealing; Conducting materials; Reactive power; Semiconductor thin films; Substrates; Temperature; Thermal conductivity; Thermal factors; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on

Conference_Location

Beijing

ISSN

1094-2734

Print_ISBN

0-7803-7205-0

Type

conf

DOI

10.1109/ICT.2001.979903

Filename

979903