DocumentCode :
2175541
Title :
Long-period grating loaded semiconductor separate confinement heterostructure (SCH) waveguide for polarization-independent gain equalizing devices
Author :
Abe, Toshitaka ; Tabuchi, Hiromasa ; Terada, Kenichi ; Utaka, Katsuyuki
Author_Institution :
Sch. of Sci. & Eng., Waseda Univ., Tokyo
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
566
Lastpage :
569
Abstract :
We investigated InGaAsP/InP long-period grating loaded separate confinement heterostructure waveguide for a polarization independent gain equalizing device. Structure design was discussed, and experimentally fundamental notch filtering characteristics were demonstrated
Keywords :
III-V semiconductors; diffraction gratings; equalisers; gallium arsenide; gallium compounds; indium compounds; notch filters; optical design techniques; optical fibre filters; optical fibre polarisation; semiconductor heterojunctions; InGaAsP-InP; long-period grating; notch filtering characteristics; polarization-independent gain equalizing devices; semiconductor separate confinement heterostructure waveguide; structure design; Couplings; Equalizers; Erbium-doped fiber amplifier; Filters; Gratings; Indium phosphide; Optical fiber polarization; Propagation constant; Semiconductor waveguides; Wavelength division multiplexing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517560
Filename :
1517560
Link To Document :
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