Title :
Picosecond free-carrier recombination in indium phosphide photonic crystals
Author :
Holzman, J.F. ; Strasser, P. ; Wüest, R. ; Robin, F. ; Erni, D. ; Jäckel, H.
Author_Institution :
Electron. Lab., Swiss Fed. Inst. of Technol., Zurich
Abstract :
Free-carrier generation and recombination dynamics are studied in InP photonic crystals using an ultrafast time-resolved reflectivity setup. It is found that the free-carrier lifetime depends strongly on the overall structure of the photonic crystal lattice
Keywords :
III-V semiconductors; carrier lifetime; crystal structure; indium compounds; photonic crystals; surface recombination; InP; free-carrier generation dynamics; free-carrier lifetime; indium phosphide photonic crystals; photonic crystal lattice structure; picosecond free-carrier recombination; ultrafast time-resolved reflectivity; Etching; Indium phosphide; Lattices; Optical modulation; Periodic structures; Photonic crystals; Radiative recombination; Reflectivity; Spontaneous emission; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517561
