DocumentCode
2175590
Title
Spontaneous recombination lifetime in compressively strained InGaAs quantum well lasers with InGaAsP and GaAs barrier/waveguide layers
Author
Susaki, Wataru ; Ukawa, Soichiro
Author_Institution
Osaka Electro-Commun. Univ., Neyagawa
fYear
2005
fDate
8-12 May 2005
Firstpage
574
Lastpage
577
Abstract
Spontaneous carrier recombination lifetime increases with indium content in compressively strained InGaAs quantum well lasers grown on GaAs. It also becomes longer in lasers with wider bandgap InGaAsP barrier/waveguide layers by replacing the GaAs ones
Keywords
III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; internal stresses; quantum well lasers; InGaAsP; barrier-waveguide layers; compressively strained InGaAs quantum well lasers; indium content; spontaneous recombination lifetime; Gallium arsenide; Indium gallium arsenide; Laser transitions; Pulse measurements; Quantum well lasers; Radiative recombination; Spontaneous emission; Temperature; Threshold current; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location
Glasgow, Scotland
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517562
Filename
1517562
Link To Document