Title :
Fabrication of thermoelectric materials with bismuth nanowire array
Author :
Wang, Wei ; Zhang, Weiling ; Si, Liping ; Zhang, Jianzhong ; Gao, Jianping
Author_Institution :
Dept. of Appl. Chem., Tianjin Univ., China
Abstract :
It has been theoretically verified that the thermoelectric performance can be improved greatly when normal thermoelectric materials possess low dimensional structure. In our lab., Doped N-type and P-type Bi nanowire array thermoelectric materials have been fabricated by electrodeposition technology. The porous alumina films with nano-pore array structure were used as template, and one-dimensional thermoelectric materials dispersed in alumina matrix have been obtained, and their composition and structure have been analyzed
Keywords :
alumina; arrays; bismuth; crystal structure; electrodeposition; elemental semiconductors; nanostructured materials; nanotechnology; porous materials; semiconductor growth; semiconductor quantum wires; stoichiometry; thermoelectricity; Al2O3-Bi; alumina matrix; bismuth nanowire array; composition; doped n-type Bi nanowire; electrodeposition; low dimensional structure; nano-pore array structure; one-dimensional thermoelectric materials; p-type Bi nanowire; porous alumina films; structure; template; thermoelectric materials; Bismuth; Building materials; Electrodes; Fabrication; Mesoporous materials; Nanoporous materials; Nanostructured materials; Quantum dots; System testing; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-7205-0
DOI :
10.1109/ICT.2001.979908
